igc136t170s8rh 2 edited by in fineon technologies, ifag ipc t d vls , l78 04 n , l7804u, l7804f, edition 1.1 , 27.06.2014 igbt 3 power chip features : ? ? ? ? ? ? recommended for: ? applications: ? chip type v ce i c n 1 ) die size package igc136t170s8 r h 2 1 7 00v 117.5 a 17.72 x 7.7 mm 2 sawn on foil 1 ) nominal collector current at tc = 100c , not subject to production test - verified by design/characterization mechan ical p arameter s die size 17.72 x 7.7 mm 2 emitter pad size (incl. gate pad) see chip drawing gate pad size 1.674 x 0.899 area total 136.4 thickness 1 90 m wafer size 200 mm max.possible chips per wafer 187 passivation frontside photoimide pad m etal 3200 nm alsicu backside metal ni ag C system die bond e lectrically conductive epoxy glue and soft solder wire bond al, <500m reject i nk dot s ize ? 0.65mm ; max 1.2mm storage environment for original and sealed mbb bags ambient atmosphere air, t emperature 17c C 25c, < 6 month for open mbb bags acc. to iec62258 - 3: atmosphere >99% nitrogen or inert gas, humidity <25%rh, temperature 17c C 25c, < 6 month g c e
igc136t170s8rh 2 edited by in fineon technologies, ifag ipc t d vls , l78 04 n , l7804u, l7804f, edition 1.1 , 27.06.2014 maximum r atings parameter symbol value unit collector - e mitter voltage , t vj =25 ? c v ce 17 00 v dc collector current, limited by t vj max i c 1 ) a pulsed collector current, t p limited by t vj max 2 ) i c , p u l s 352.5 a gate emitter voltage v ge ? 20 v junction temperature range t vj - 40 ... +175 c operating junction temperat ure t vj - 40 ... +150 short circuit data 2 ) 3) v ge = 15v, v cc = 10 00v, t vj = 150c t sc 10 s 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterization 3 ) allowed number of short circuits: <1 000; time between short circuits: >1s. static c haracteristic s (tested on wafer ), t vj =25 ? parameter symbol conditions value unit min. typ. max. collector - emitter breakdown voltage v (br)ces v ge =0v , i c = 2 ma 17 00 v collecto r - emitter saturation voltage v cesat v ge =15v, i c =35.25 a 1.0 1.1 1.3 gate - emitter threshold voltage v ge(th) i c =4 .7 ma , v ge = v ce 5.3 5.8 6.3 zero gate voltage collector current i ces v ce =17 0 0v , v ge =0v 7 a gate - emitter leakage current i ges v ce =0v , v ge = 20v 300 na integrated gate resistor r g 11. 5 ? electrical c haracteristic s ( not subject to production test - verified by design / characterization ) parameter symbol conditions value unit min. typ. max. collector - emitter saturation voltage t vj =25 ? v ce sat v ge =15v, i c =117.5 a 1.7 5 2. 2 v t vj =1 5 0 ? c i e s v ce = 25 v , v ge = 0v , f = 1m h z t vj =25 ? 10568 pf reverse transfer capacitance c r e s 340
igc136t170s8rh 2 edited by in fineon technologies, ifag ipc t d vls , l78 04 n , l7804u, l7804f, edition 1.1 , 27.06.2014 further e lectrical c haracteristic switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. this chip data sheet refers to the device data sheet f f1400r17ip4 rev. 2. 2
igc136t170s8rh 2 edited by in fineon technologies, ifag ipc t d vls , l78 04 n , l7804u, l7804f, edition 1.1 , 27.06.2014 chip d rawing e = emitter g = gate t = test pad do not contact e g t e e e e
igc136t170s8rh 2 edited by in fineon technologies, ifag ipc t d vls , l78 04 n , l7804u, l7804f, edition 1.1 , 27.06.2014 description aql 0,65 for visual inspection according to failure catalogue electrostatic discharge sensitive device according to mil - std 883 re vision h istory version subjects (major changes since last revision) date published by infineon technologies ag 81726 munich, germany ? 2014 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereb y disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non - infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditio ns and prices, please contact the nearest infineon technologies office ( www. infineon.com ) . warnings due to technical requirements, components may cont ain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life - support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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